Browsing by Author "Lişesivdin, S. B."
Now showing items 1-6 of 6
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The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures
(Elsevier BV * North-Holland, 2007-11-01)The two-dimensional electron gas (2DEG) transport properties of two-step growth undoped Al0.25Ga0.75N/GaN heterostructures with semi-insulating buffer, grown by MOCVD, were investigated in a temperature range of 20–350 ... -
Electronic structure of β-Si3N4 crystals with substitutional icosagen group impurities
(National Institute of Optoelectronics, 2017)The β-Si3N4 crystals are widely used in industrial and electronics areas. Therefore, β-Si3N4 has drawn the attention of researchers for many years. In this study, effects of icosagen group impurity atoms in the IIIA group ... -
A first principles investigation of the effect of aluminum, gallium and indium impurities on optical properties of β-Si3N4 structure
(Elsevier GmbH, 2017)In this study, effects of some impurity atoms included in IIIA group such as Al, Ga, and In on the optical properties of the β-Si3N4 structure have been discussed. The calculations were made using Density Functional Theory ... -
Negative differential resistance observation and a new fitting model for electron drift velocity in GaN-based heterostructures
(Institute of Electrical and Electronics Engineers, 2018)The aim of this paper is an investigation of electric field-dependent drift velocity characteristics for Al0.3Ga0.7N/AlN/GaN heterostructures without and with in situ Si3N4 passivation. The nanosecond-pulsed current-voltage ... -
SiC substrate effects on electron transport in the epitaxial graphene layer
(Springer, 2014)Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG ... -
Strain calculations from hall measurements in undoped Al 0.25Ga0.75N/GaN HEMT structures
(American Institute of Physics, 2007)The transport properties of undoped Al0.25Ga0.75N/GaN HEMT structures grown by MOCVD were investigated in a temperature range of 20 K-350 K. With Quantitative Mobility Spectrum Analysis (QMSA) method; it was found that, ...
