Browsing by Author "Lee I.-H."
Now showing items 1-7 of 7
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Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures
(IEEE, 2010)Crystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for ... -
Electric field dependence of radiative recombination lifetimes in polar InGaN/GaN quantum heterostructures
(IEEE, 2009)We report on external electric field dependence of recombination lifetimes in polar InGaN/GaN quantum heterostructures. In our study, we apply external electric fields one order of magnitude less than and in opposite ... -
Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures
(SPIE, 2011)We investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm by employing Ag nanostructures on the top of a roughened p-type GaN. After the growth of a blue light emitting diode ... -
Förster-type nonradiative energy transfer directed from colloidal quantum dots to epitaxial quantum wells for light harvesting applications
(Optical Society of America, 2011)We report on Frster-type nonradiative energy transfer directed from CdSe/ZnS core/shell quantum dots to InGaN/GaN quantum wells with 69.6% efficiency at 1.527 ns-1 rate at room temperature for potential light harvesting ... -
Nanocrystal integrated light emitting diodes based on radiative and nonradiative energy transfer for the green gap
(IEEE, 2009)Recently the photometric conditions for ultra-efficient solid-state lighting have been discussed [1-2]. These studies show that a luminous efficacy of optical radiation at 408 lm/Wopt and a color rendering index (CRI) of ... -
White light generating nonradiative energy transfer directly from epitaxial quantum wells to colloidal nanocrystal quantum dots
(Optical Society of America, 2009)We present white light generating nonradiative Förster resonance energy transfer at a rate of (2ns)-1 directly from epitaxial InGaN/GaN quantum wells to CdSe/ZnS heteronanocrystals in their close proximity at chromaticit ...
