Now showing items 1-19 of 19

    • Analysis of the mosaic defects in graded and non graded InxGa1‐xN solar cell structures 

      Kars Durukan, İ.; Öztürk, M. K.; Özçelik, S.; Özbay, Ekmel (Süleyman Demirel Üniversitesi, 2017)
      In this study, graded (A) InxGa1‐xN (10.5 ≤ x ≤ 18.4) and non graded (B) InxGa1‐xN (13.6 ≤ x ≤ 24.9) samples are grown on c‐oriented sapphire substrate using the Metal Organic Chemical Vapour Deposition (MOCVD) technique. ...
    • Analyzing the AlGaN/AlN/GaN heterostructures for HEMT applications 

      K. Durukan, İ.; Akpınar, Ö.; Avar, C.; Gultekin, A.; Öztürk, M. K.; Özçelik, S.; Özbay, Ekmel (American Scientific Publishers, 2018-03)
      In the present work, we have reported two high-electron-mobility transistor structures (HEMTs) with different thick AlN buffer deposited on sapphire substrates by metal-organic chemical vapor deposition (MOCVD). AlN buffer ...
    • Analyzing the InGaN LED structures for white LED applications 

      Durukan, İ. K.; Öztürk, M. K.; Özçelik, S.; Özbay, Ekmel (Gazi Üniversitesi, 2017)
      In this paper, blue-light InGaN/GaN light-emitting diodes were deposited on sapphire substrate by the Metal Organic Chemical Vapor Deposition (MOCVD) to investigate the properties of blue LEDs with various well thickness ...
    • Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD 

      Arslan, E.; Öztürk, M. K.; Tıraş, E.; Tıraş, T.; Özçelik, S.; Özbay, Ekmel (Springer New York LLC, 2017)
      High-resistive GaN (>108 Ω cm) layers have been grown with different buffer structures on 6H-SiC substrate using metalorganic chemical vapor deposition reactor. Different combination of the GaN/AlN super lattice, low ...
    • Characterization of AlInN/AlN/GaN heterostructures with different AlN buffer thickness 

      Çörekçi, S.; Dugan, S.; Öztürk, M. K.; Çetin, S. Ş.; Çakmak, M.; Özçelik, S.; Özbay, Ekmel (Springer New York LLC, 2016)
      Two AlInN/AlN/GaN heterostructures with 280-nm- and 400-nm-thick AlN buffer grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated by x-ray diffraction (XRD), atomic force ...
    • Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD 

      Çörekçi, S.; Öztürk, M. K.; Bengi, A.; Çakmak, M.; Özçelik, S.; Özbay, Ekmel (Springer, 2010-10-23)
      An AlN buffer layer and a thick-GaN layer for high-electron-mobility transistors (HEMTs) were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The structural and morphological properties of ...
    • Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures 

      Tülek, R.; Ilgaz, A.; Gökden, S.; Teke, A.; Öztürk, M. K.; Kasap, M.; Özçelik, S.; Arslan, E.; Özbay, Ekmel (AIP Publishing LLC, 2009-01-07)
      The transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures were studied. The samples were grown by metal-organic chemical vapor ...
    • A detailed study on optical properties of InGaN/GaN/Al2O3 multi quantum wells 

      Bilgili, A. K.; Akpınar, Ö.; Öztürk, M. K.; Özçelik, S.; Suludere, Z.; Özbay, Ekmel (Springer, 2019)
      In this study optical properties of InGaN/GaN/Al2O3 multi-quantum well (MQW) structures are investigated in detail. Three samples containing InGaN/GaN/Al2O3 MQWs are grown by using metal organic chemical vapor deposition ...
    • Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs 

      Çörekçi, S.; Öztürk, M. K.; Yu, H.; Çakmak, M.; Özçelik, S.; Özbay, Ekmel (Pleiades Publishing, 2013)
      Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The ...
    • Effects of the AlN nucleation layer thickness on the crystal structures of an AlN epilayer grown on the 6H-SiC substrate 

      Arslan, Engin; Öztürk, M. K.; Özçelik, S.; Özbay, Ekmel (Taylor & Francis, 2019-04-08)
      The influence of the LT-AlN(NL) growth times on the mosaic structure parameters of the AlN layer grown on the LT-AlN(NL)/6H-SiC structures as well as the dislocation densities and the strain behaviours in the AlN epilayers ...
    • Examination of the temperature related structural defects of InGaN/GaN solar cells 

      Durukan, İ. K.; Bayal, Ö.; Kurtuluş, G.; Baş, Y.; Gültekin, A.; Öztürk, M. K.; Çörekçi, S.; Tamer, M.; Özçelik, S.; Özbay, Ekmel (Academic Press, 2015)
      In this study the effects of the annealing temperature on the InGaN/GaN solar cells with different In-contents grown on sapphire substrate by the Metal Organic Chemical Vapor Deposition (MOCVD) are analyzed by High Resolution ...
    • InGaN/GaN LED yapıların mozaik yapı analizi 

      Durukan, İ. K.; Öztürk, M. K.; Özçelik, S.; Özbay, Ekmel (Osman Sağdıç, 2018)
      Bu çalışmada, MOCVD yöntemi ile üretilen InGaN/GaN ışık yayan diyot (LED) yapılarının mozaik yapıları analiz edildi. Safir alttaş üzerine biriktirilen, farklı In kompozisyonuna sahip InGaN/GaN bariyer tabakasının mozaik ...
    • Microstructural analysis with graded and non-graded indium in InGaN solar cell 

      Durukan, I. K.; Öztürk, M. K.; Çörekçi, S.; Tamer, M.; Baş, Y.; Özçelik, S.; Özbay, Ekmel (American Scientific Publishers, 2017)
      In this study are graded and non graded InGaN/GaN samples grown on c-oriented sapphire substrate using the Metal Organic Chemical Vapour Deposition (MOCVD) technique. The structural and morphological properties of the grown ...
    • Microstructural defect properties of InGaN/GaN blue light emitting diode structures 

      Bas, Y.; Demirel, P.; Akin, N.; Başköse, C.; Özen, Y.; Kınacı, B.; Öztürk, M. K.; Özcelik, S.; Özbay, Ekmel (Springer US, 2014-06-28)
      In this paper, we study structural and morphological properties of metal-organic chemical vapour deposition-grown InGaN/GaN light emitting diode (LED) structures with different indium (In) content by means of high-resolution ...
    • Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction 

      Öztürk, M. K.; Hongbo, Y.; SarIkavak, B.; Korçak, S.; Özçelik, S.; Özbay, Ekmel (Springer, 2009-04-18)
      The important structural characteristics of hexagonal GaN in an InGaN/GaN multi quantum well, which was aimed to make a light emitted diode and was grown by metalorganic chemical vapor deposition on c-plain sapphire, are ...
    • Structural and optical properties of an InxGa1-xN/GaN nanostructure 

      Korçak, S.; Öztürk, M. K.; Çörekçi, S.; Akaoğlu, B.; Yu, H.; Çakmak, M.; Sağlam, S.; Özçelik, S.; Özbay, Ekmel (Elsevier BV * North-Holland, 2007)
      The structural and optical properties of an InxGa1-xN/GaN multi-quantum well (MQW) were investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), spectroscopic ellipsometry (SE) and photoluminescence ...
    • Structural properties of InGaN/GaN/Al2O3 structure from reciprocal space mapping 

      Bilgili, A. K.; Akpınar, Ö.; Kurtuluş, G.; Öztürk, M. K.; Özçelik, S.; Özbay, Ekmel (Springer, 2018)
      By using metal organic chemical vapor deposition technique, InGaN/GaN solar cell (SC) structure is deposited over sapphire (Al2O3) wafer as GaN buffer and GaN epitaxial layers. Structural properties of InGaN/GaN/Al2O3 SC ...
    • Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer 

      Çörekçi, S.; Öztürk, M. K.; Akaoğlu, B.; Çakmak, M.; Özçelik, S.; Özbay, Ekmel (AIP Publishing LLC, 2007)
      AlxGa1-xN/GaN (x similar to 0.3) heterostructures with and without a high-temperature (HT) AlN interlayer (IL) have been grown on sapphire (Al2O3) substrates and AlN buffer/Al2O3 templates by metal organic chemical vapor ...
    • Swanepoel method for AlInN/AlN HEMTs 

      Akpınar, Ö.; Bilgili, A. K.; Başköşe, Ü. C.; Öztürk, M. K.; Özçelik, S.; Özbay, Ekmel (Springer, 2020)
      In this study, AlInN/AlN high electron mobility transistor (HEMT) structure is grown on c-oriented sapphire substrate using metal organic chemical vapor deposition method. Optical properties of the structure are investigated ...